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KSD882
KSD882
Audio Frequency Power Amplifier Low Speed Switching
* Complement to KSB772
1
TO-126 2.Collector 3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value 40 30 5 3 7 0.6 10 1 150 - 55 ~ 150 Units V V V A A A W W C C
* PW10ms, Duty Cycle50%
Electrical Characteristics TC=25C unless otherwise noted
Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = 30V, IE = 0 VEB = 3V, IC = 0 VCE = 2V, IC = 20mA VCE = 2V, IC = 1A IC = 2A, IB = 0.2A IC = 2A, IB = 0.2A VCE = 5V, IE = 0.1A VCB = 10V, IE = 0 f = 1MHz 30 60 150 160 0.3 1.0 90 45 Min. Typ. Max. 1 1 400 0.5 2.0 V V MHz pF Units A A
* Pulse Test: PW350s, Duty Cycle2% Pulsed
hFE Classificntion
Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 G 200 ~ 400
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD882
Typical Characteristics
2.0
1000
IC[A], COLLECTOR CURRENT
1.6
IB = 10mA IB = 8mA IB = 7mA IB = 6mA IB = 5mA
VCE = 2V
1.2
hFE, DC CURRENT GAIN
IB = 9mA
100
0.8
IB = 4mA IB = 3mA
0.4
IB = 2mA
0.0 0
IB = 1mA
4 8 12 16 20
10 1E-3
0.01
0.1
1
10
VCE[V], COLLECTOR-EMITTER VOLTAGE
IC[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT
1000
IC = 10 IB
1
VCE = 5V
V BE(sat)
100
0.1
VCE(sat)
0.01
10
1E-3 1E-3
0.01
0.1
1
10
1 0.01
0.1
1
IC[A], COLLECTOR CURRENT
IC[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage
Figure 4. Current Gain Bandwidth Product
1000
10
0 10
m 10
IE=0 f=1MHz
ICMAX. (pulse)
us
s
s 1m
IC[A], COLLECTOR CURRENT
IC MAX. (DC) Diss
1
Cob[pF], CAPACITANCE
ipa
t io nL im
ite
d
b S/ m Li
100
d ite
0.1
10 1 10 100
0.01 1 10 100
VCB[V], COLLECTOR-BASE VOLTAGE
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Collector Output Capacitance
Figure 6. Safe Operating Area
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD882
Typical Characteristics (Continued)
160
16
140
14
120
PC[W], POWER DISSIPATION
125 150 175 200
dT(%), IC DERATING
12
100
10
80
S/b
L im
it e d
8
60
Di
ss
6
ip
40
at ion
Li m
4
20
ite
d
2
0 0 25 50
o
0 75 100 0 25 50
o
75
100
125
150
175
TC[ C], CASE TEMPERATURE
TC[ C], CASE TEMPERATURE
Figure 7. Derating Curve Of Safe Operating Areas
Figure 8. Power Derating
(c)2000 Fairchild Semiconductor International
Rev. A, February 2000
KSD882
Package Demensions
TO-126
0.10
3.90
8.00 0.30
3.25 0.20
14.20MAX
o3.20 0.10
11.00
0.20
(1.00) 0.75 0.10 1.60 0.10 0.75 0.10
0.30
(0.50) 1.75 0.20
#1 2.28TYP [2.280.20] 2.28TYP [2.280.20]
13.06
16.10
0.20
0.50 -0.05
+0.10
Dimensions in Millimeters
(c)2000 Fairchild Semiconductor International Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM
DISCLAIMER
HiSeCTM ISOPLANARTM MICROWIRETM POPTM PowerTrench(R) QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6
SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. E

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